Wafer substrate selection, buffer layer design, and 2-DEG optimization are key to scaling GaN power devices higher.
Aalyia Shaukat is an Editor at EE Times. She specializes in a range of engineering topics, including mechanical and electrical engineering, energy sustainability, and robotic engineering, with a keen focus on energy storage and renewable energy solutions. Aalyia's work has been featured in prominent publications such as EE Times, EE Times Asia, embedded.com, EDN: Voice of the Engineer, and Power Electronics News.